Category :
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar RF Transistors
Current - Collector (Ic) (Max) :
100mA
Mounting Type :
Surface Mount
Frequency - Transition :
10GHz
Package :
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Voltage - Collector Emitter Breakdown (Max) :
6V
Supplier Device Package :
UFM
Mfr :
Toshiba Semiconductor and Storage
Noise Figure (dB Typ @ f) :
0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Package / Case :
3-SMD, Flat Lead
Operating Temperature :
150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 30mA, 5V
Base Product Number :
MT3S111
Description :
RF SIGE NPN BIPOLAR TRANSISTOR N